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US 2010/0133550 A1Published application
Stable power devices on low-angle off-cut silicon carbide crystals
AssigneeCree, Inc.
InventorsQingchun Zhang, Anant Agarwal, Doyle Craig Capell, Albert Burk, Joseph Sumakeris, Michael O'Loughlin
Life of this patent
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Abstract
A silicon carbide-based power device includes a silicon carbide drift layer having a planar surface that forms an off-axis angle with a <0001> direction of less than 8°.
Claims15
A silicon carbide-based power device, comprising:
- a silicon carbide drift layer having a planar surface that forms an off-axis angle with a <0001> direction of greater than 0° and less than 8°.
A method of forming a silicon carbide-based power device, comprising:
- forming a silicon carbide drift layer having a planar surface that forms an off-axis angle with a <0001> direction of less than 8°.
Dependencies are inferred from the claim text.