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US 2010/0133549 A1Published application
Semiconductor Devices with Current Shifting Regions and Related Methods
AssigneeCree, Inc.
InventorsQingchun Zhang, Anant K. Agarwal
Life of this patent
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Abstract
A semiconductor device may include a semiconductor buffer layer having a first conductivity type and a semiconductor mesa having the first conductivity type on a surface of the buffer layer. In addition, a current shifting region having a second conductivity type may be provided adjacent a corner between the semiconductor mesa and the semiconductor buffer layer, and the first and second conductivity types may be different conductivity types. Related methods are also discussed.
Claims21
A semiconductor device comprising:
- a semiconductor buffer layer having a first conductivity type;
- a semiconductor mesa having the first conductivity type on the buffer layer;
- and
- a current shifting region having a second conductivity type adjacent a corner and within the semiconductor buffer layer, wherein the first and second conductivity types are different conductivity types.
1 more element
A method of forming a semiconductor device, the method comprising:
- providing a semiconductor buffer layer having a first conductivity type;
- providing a semiconductor mesa having the first conductivity type on the buffer layer;
- and
- providing a current shifting region having a second conductivity type adjacent a corner between the semiconductor mesa and the semiconductor buffer layer, wherein the first and second conductivity types are different conductivity types.
1 more element
A semiconductor device comprising:
- a semiconductor buffer layer having a first conductivity type;
- a semiconductor mesa having the first conductivity type on the buffer layer;
- and
- a current shifting region having a second conductivity type adjacent a corner between the semiconductor mesa and the semiconductor buffer layer, wherein the first and second conductivity types are different conductivity types, and wherein the current shifting region is between portions of the semiconductor buffer layer and the semiconductor mesa having the first conductivity type.
1 more element
Dependencies are inferred from the claim text.