System and Method for Manufacturing Thick and Thin Film Devices Using a Donee Layer Cleaved From a Crystalline Donor

An electronic and/or optoelectronic device structure, comprising:

• a first component layer comprising:
• a first cleaved crystalline donee layer having a first cleaved surface and a second obverse cleaved surface spaced from said first cleaved surface;
• and
• a first device layer, confronting said first cleaved surface, formed monolithically with said first cleaved crystalline donee layer, said first device layer containing at least one of 1) an electronic device and 2) an optoelectronic device.

A method of making an electronic and/or optoelectronic device structure by layer transfer, comprising:

• providing a crystalline donor having a first free surface and a plurality of intrinsic cleavage planes spaced from one another and each substantially parallel to the first surface, wherein the first free surface and a particular one of the plurality of intrinsic cleavage planes defining a first donee layer;
• fabricating a device layer containing at least one device upon the first donee layer so that the at least one device is monolithic with the first donee layer, said at least one device being either one of an electronic type and an optoelectronic type;
• securing a first handle to either the device layer or the first free surface of the first donee layer;
• and
• cleaving the first donee layer from the crystalline donor along the particular one of the plurality of intrinsic cleavage planes so as to liberate the first donee layer, in combination with the first handle, from the crystalline donor;
• wherein said fabricating of the device layer includes forming a single-crystal semiconductor layer on the first donee layer.