Micro electro mechanical device and manufacturing method thereof

A micro electro mechanical device comprising:

• a micro structure formed over a substrate having an insulating surface, the micro structure including a first structural layer movable with respect to the substrate and a second structural layer which is partially fixed to the substrate;
• and
• an electric circuit including a transistor electrically connected to the micro structure and formed over the substrate, the transistor including a semiconductor layer in which a channel formation region is formed,
• wherein each of the first structural layer and the second structural layer includes an insulating layer and a conductive layer which is in contact with the insulating layer,
• wherein a gate insulating layer of the transistor and the insulating layer of each of the first structural layer and the second structural layer are formed using patterning a same insulating film formed over the substrate,
• wherein the semiconductor layer and the conductive layer of each of the first structural layer and the second structural layer are formed using patterning a same semiconductor film formed over the substrate, and
• wherein the conductive layer of each of the first structural layer and the second structural layer includes a compound of a semiconductor and a metal element.

A micro electro mechanical device comprising:

• a micro structure formed over a substrate having an insulating surface, the micro structure including a first structural layer movable with respect to the substrate and a second structural layer which is partially fixed to the substrate;
• and
• an electric circuit including a transistor electrically connected to the micro structure and formed over the substrate,
• wherein the transistor includes a gate insulating layer, a first semiconductor layer in which a channel formation region is formed, and a second semiconductor layer in which an impurity region is formed,
• wherein each of the first structural layer and the second structural layer includes an insulating layer, a third semiconductor layer which is in contact with the insulating layer, and a fourth semiconductor layer which is in contact with the third semiconductor layer,
• wherein the gate insulating layer and the insulating layer of each of the first structural layer and the second structural layer are formed using patterning a same insulating film formed over the substrate,
• wherein the first semiconductor layer and the third semiconductor layer are formed using patterning a same semiconductor film formed over the substrate, and
• wherein the second semiconductor layer and the fourth semiconductor layer are formed using patterning a same semiconductor film formed over the substrate.

A micro electro mechanical device comprising:

• a micro structure formed over a substrate having an insulating surface, the micro structure including a first structural layer movable with respect to the substrate and a second structural layer which is partially fixed to the substrate;
• and
• an electric circuit including a transistor electrically connected to the micro structure and formed over the substrate,
• wherein the transistor includes a gate insulating layer, a first semiconductor layer in which a channel formation region is formed, and a second semiconductor layer in which an impurity region is formed,
• wherein each of the first structural layer and the second structural layer includes an insulating layer, a third semiconductor layer which is in contact with the insulating layer, and a conductive layer which is in contact with the third semiconductor layer,
• wherein the gate insulating layer and the insulating layer of each of the first structural layer and the second structural layer are formed using patterning a same insulating film formed over the substrate,
• wherein the first semiconductor layer and the third semiconductor layer are formed using patterning a same semiconductor film,
• wherein the second semiconductor layer and the conductive layer of each of the first structural layer and the second structural layer are formed using patterning a same semiconductor film, and
• wherein the conductive layer of each of the first structural layer and the second structural layer includes a compound of a semiconductor and a metal element.

A micro electro mechanical device comprising:

• a micro structure formed over a substrate having an insulating surface, the micro structure including a first structural layer movable with respect to the substrate and a second structural layer which is partially fixed to the substrate;
• and
• an electric circuit including a transistor electrically connected to the micro structure and formed over the substrate,
• wherein the transistor includes a gate insulating layer, a first semiconductor layer in which a channel formation region is formed, and a second semiconductor layer in which an impurity region is formed,
• wherein each of the first structural layer and the second structural layer includes an insulating layer, a third semiconductor layer which is in contact with the insulating layer, and a conductive layer which is in contact with the third semiconductor layer,
• wherein the gate insulating layer and the insulating layer of each of the first structural layer and the second structural layer are formed using patterning a same insulating film formed over the substrate,
• wherein the first semiconductor layer and the third semiconductor layer are formed using patterning a same semiconductor film,
• wherein the second semiconductor layer and the conductive layer of each of the first structural layer and the second structural layer are formed using patterning a same semiconductor film, and
• wherein the third semiconductor layer includes a compound of a semiconductor and a metal element.