Microbolometer infrared detector elements and methods for forming same
AssigneeL-3 Communications Corporation
InventorsAlthanasios J. Syllaios, Thomas R. Schimert, Michael F. Taylor
Life of this patent
Estimating the term…
Abstract
Microbolometer infrared detector elements that may be formed and implemented by varying type/s of precursors used to form amorphous silicon-based microbolometer membrane material/s and/or by varying composition of the final amorphous silicon-based microbolometer membrane material/s (e.g., by adjusting alloy composition) to vary the material properties such as activation energy and carrier mobility. The amorphous silicon-based microbolometer membrane material/s materials may include varying amounts of one or more additional and optional materials, including hydrogen, fluorine, germanium, n-type dopants and p-type dopants.
Claims57
An infrared detector element comprising:
- a substrate;
- and
- an infrared detector membrane disposed in spaced relationship above said substrate;
- wherein said infrared detector membrane comprises an amorphous silicon-based material, said amorphous silicon-based material comprising at least one of a fluorinated amorphous silicon-based material, an amorphous silicon germanium-based material, an amorphous germanium-based material, a hydrogenated amorphous silicon-based material having a hydrogen content of greater than about 4 atomic percent, or a combination thereof;
- and
- wherein a material structure of said amorphous silicon-based material comprises microcrystallites.
A focal plane array assembly, comprising:
- a substrate;
- and
- a plurality of infrared detector elements, each of said plurality of infrared detector elements comprising an infrared detector membrane disposed in spaced relationship above said substrate, and read out integrated circuitry (ROIC) electrically coupled to said infrared detector membrane;
- wherein said infrared detector membrane of each of said plurality of infrared detector elements comprises an amorphous silicon-based material, said amorphous silicon-based material comprising at least one of a fluorinated amorphous silicon-based material, an amorphous silicon germanium-based material, an amorphous germanium-based material, a hydrogenated amorphous silicon-based material having a hydrogen content of greater than about 4 atomic percent, or a combination thereof;
- and
- wherein a material structure of said amorphous silicon-based material comprises microcrystallites.
A method for making an infrared detector element comprising:
- providing a substrate;
- and
- forming an infrared detector membrane in spaced relationship above a surface of said substrate;
- wherein said infrared detector membrane comprises an amorphous silicon-based material, said amorphous silicon-based material comprising at least one of a fluorinated amorphous silicon-based material, an amorphous silicon germanium-based material, an amorphous germanium-based material, a hydrogenated amorphous silicon-based material having a hydrogen content of greater than about 4 atomic percent, or a combination thereof;
- wherein said method comprises forming said amorphous silicon-based material from at least one silicon source that is diluted with hydrogen gas;
- and
- wherein a material structure of said amorphous silicon-based material comprises microcrystallites.
(canceled)
A method of making a focal plane array assembly, comprising:
- providing a substrate;
- and
- forming a plurality of infrared detector elements, each of said plurality of infrared detector elements comprising an infrared detector membrane disposed in spaced relationship above said substrate, and read out integrated circuitry (ROIC) electrically coupled to said infrared detector membrane;
- wherein said infrared detector membrane comprises an amorphous silicon-based material, said amorphous silicon-based material comprising at least one of a fluorinated amorphous silicon-based material, an amorphous silicon germanium-based material, an amorphous germanium-based material, a hydrogenated amorphous silicon-based material having a hydrogen content of greater than about 4 atomic percent, or a combination thereof;
- wherein said method comprises forming said amorphous silicon-based material from at least one silicon source that is diluted with hydrogen gas;
- and
- wherein a material structure of said amorphous silicon-based material comprises microcrystallites.
(canceled)
A method for making an infrared detector element comprising:
- providing a substrate;
- forming an infrared detector membrane in spaced relationship above a surface of said substrate, said infrared detector membrane comprising amorphous silicon-based material;
- forming said amorphous silicon-based material from precursors comprising at least one source of silicon and boron trifluoride (BF3);
- wherein said method comprises forming said amorphous silicon-based material from at least one silicon source that is diluted with hydrogen gas;
- and
- wherein a material structure of said amorphous silicon-based material comprises microcrystallites.
Dependencies are inferred from the claim text.