Organic thin film transistor and flat panel display device including the same
AssigneeSamsung Mobile Display Co., Ltd.
InventorNam-Choul Yang
Life of this patent
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Abstract
Provided are an organic thin film transistor providing smoother movement of holes between a source electrode or a drain electrode and a p-type organic semiconductor layer, and a flat panel display device including the organic thin film transistor. The organic thin film transistor includes a substrate, a gate electrode disposed on the substrate, a p-type organic semiconductor layer insulated from the gate electrode, a source electrode and a drain electrode separated from each other and insulated from the gate electrode, and a hole injection layer interposed between the source and drain electrodes and the p-type organic semiconductor layer.
Claims4
An organic thin film transistor comprising:
- a substrate;
- a gate electrode disposed on the substrate;
- a p-type organic semiconductor layer insulated from the gate electrode;
- a source electrode and a drain electrode separated from each other and insulated from the gate electrode;
- and
- a hole injection layer interposed between the source and drain electrodes and the p-type organic semiconductor layer,
- wherein the p-type organic semiconductor layer is disposed over the gate electrode, the source electrode and the drain electrode are disposed over the p-type organic semiconductor layer, and a gate insulation film is further disposed between the p-type organic semiconductor layer and the gate electrode.
A flat panel display device comprising one or more organic thin film transistors, each comprising:
- a substrate;
- a gate electrode disposed on the substrate;
- a p-type organic semiconductor layer insulated from the gate electrode;
- a source electrode and a drain electrode separated from each other and insulated from the gate electrode;
- and
- a hole injection layer interposed between the source and drain electrodes and the p-type organic semiconductor layer,
- wherein the p-type organic semiconductor layer is disposed over the gate electrode, the source electrode and the drain electrode are disposed over the p-type organic semiconductor layer, and a gate insulation film is further disposed between the p-type organic semiconductor layer and the gate electrode.
Dependencies are inferred from the claim text.