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US 2010/0133496 A1Published application
Resistive random access memory
AssigneeSamsung Electronics Co., Ltd.
InventorsChang-bum Lee, Chang-jung Kim, Dong-soo Lee
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Abstract
A RRAM may include a first electrode, a second electrode, and a memory resistant layer between the first and second electrodes, wherein the memory resistant layer may include a transition metal oxide doped with a metal having a high oxygen affinity. Because a RRAM includes a memory resistant layer doped with a material having a high oxygen affinity, the RRAM may be stably driven at higher temperatures.
Claims14
A RRAM comprising:
- a first electrode;
- a second electrode;
- and
- a memory resistant layer between the first and second electrodes,
- wherein the memory resistant layer includes a transition metal oxide doped with a metal having a high oxygen affinity.
2 more elements
A RRAM array comprising:
- a plurality of first electrode lines in a first direction;
- a first switch structure on each of the first electrode lines;
- a first intermediate electrode on the first switch structure;
- a first memory resistant layer on the first intermediate electrode and formed of a transition metal oxide doped with a metal having a high oxygen affinity;
- and
- a plurality of second electrode lines on the first memory resistant layer in a second direction.
3 more elements
Dependencies are inferred from the claim text.