Semiconductor Radiation Detector With a Modified Internal Gate Structure
OwnerArtto Aurolainventor
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Abstract
A semiconductor radiation detector device comprises a conductive backside layer (102) of first conductivity type and a bulk layer (103). Opposite to the conductive backside layer (102) there are a modified internal gate layer (104) of second conductivity type, a barrier layer (105) of the first conductivity type and pixel dopings (110, 112, 506, 510, 512) of the second conductivity type. The pixel dopings are adapted to be coupled to a pixel voltage, which is defined as a potential difference to a potential of the conductive backside layer (102), and which creates potential minima inside the detector material for trapping the signal charges.
Claims27
A semiconductor radiation detector device, comprising:
- a conductive backside layer (102) and
- a bulk layer (103) of a semiconductor material,
- characterised in that it comprises, on a surface of the bulk layer (103) opposite to the conductive backside layer (102), in the following order:
- a modified internal gate layer (104) of semiconductor of second conductivity type,
- a barrier layer (105) of semiconductor of first conductivity type and
- pixel dopings (111, 112, 506, 511, 512) of semiconductor of the second conductivity type, adapted to be coupled to at least one pixel voltage in order to create pixels corresponding to pixel dopings, said pixel voltage being defined as a potential difference to a potential of the conductive backside layer (102).
A semiconductor radiation detector device according to claim 14, wherein said channel stop dopings (115, 116, 515, 516) are of the first conductivity type, thus exhibiting the opposite type of conductivity compared to the pixels.
A method for detecting radiation, comprising:
- coupling a number of pixels (111, 511) on a surface of a semiconductor radiation detector device to a pixel voltage,
- illuminating said semiconductor radiation detector with radiation, characterised in that it comprises:
- collecting radiation-induced signal charges of first kind from a bulk layer (103) of said semiconductor radiation detector to local minima of a three-dimensional potential function for said charges of first kind, said local minima being locationally coincident with pixels (111) in a modified internal gate layer (104) situated next to said bulk layer (103), and
- detecting the amount of signal charge collected to local minima that coincide with pixels (111).
Dependencies are inferred from the claim text.