Dry etching apparatus and dry etching method
OwnerYasuhiro Morikawa, Koukou Suu +1inventors
InventorsYasuhiro Morikawa, Koukou Suu, Toshio Hayashi
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Abstract
A dry etching apparatus having excellent in-plane uniformity and a high etching rate and a dry etching method are provided. A dry etching apparatus includes a vacuum chamber having an upper plasma generation chamber and a lower substrate processing chamber; a magnetic field coil disposed outside a sidewall of the plasma generation chamber; an antenna coil disposed between the magnetic field coil and the outside of the sidewall and connected to a high-frequency power source; and means for introducing an etching gas disposed on top of the plasma generation chamber, wherein the sidewall is formed of a material having a relative dielectric constant of 4 or more.
Claims6
A dry etching apparatus comprising:
- a vacuum chamber including an upper plasma generation chamber and a lower substrate processing chamber;
- a magnetic field coil disposed outside a sidewall of the plasma generation chamber;
- an antenna coil disposed between the magnetic field coil and the outside of the sidewall and connected to a high-frequency power source;
- and
- means for introducing an etching gas disposed on top of the plasma generation chamber, wherein the sidewall is formed of a material having a relative dielectric constant of 4 or more.
Dependencies are inferred from the claim text.