High efficiency solar cell, method of fabricating the same and apparatus for fabricating the same
AssigneeJusung Engineering Co., Ltd.
InventorJae-Ho Kim
Life of this patent
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Abstract
A method of fabricating a solar cell includes: sequentially forming a first electrode and a first impurity-doped semiconductor layer on a transparent substrate; forming a first intrinsic semiconductor layer on the first impurity-doped semiconductor layer; heating the first intrinsic semiconductor layer to form a second intrinsic semiconductor layer; and sequentially forming a second impurity-doped semiconductor layer and a second electrode on the second intrinsic semiconductor layer.
Claims16
A method of fabricating a solar cell, comprising:
- sequentially forming a first electrode and a first impurity-doped semiconductor layer on a transparent substrate;
- forming a first intrinsic semiconductor layer on the first impurity-doped semiconductor layer;
- heating the first intrinsic semiconductor layer to form a second intrinsic semiconductor layer;
- and
- sequentially forming a second impurity-doped semiconductor layer and a second electrode on the second intrinsic semiconductor layer.
A high efficiency solar cell, comprising:
- a transparent substrate;
- a first electrode on the transparent substrate;
- a first impurity-doped semiconductor layer on the first electrode;
- an intrinsic semiconductor layer on the first impurity-doped semiconductor layer,
- the intrinsic semiconductor layer having a gradually varying crystallinity;
- a second impurity-doped semiconductor layer on the intrinsic semiconductor layer;
- and
- a second electrode on the second impurity-doped semiconductor layer.
An apparatus for fabricating a solar, comprising:
- a transfer chamber including a transfer means for transferring a substrate;
- a load lack chamber coupled with a first side portion of the transfer chamber, the load lack chamber alternately having a vacuum state and an atmospheric pressure state for inputting and outputting the substrate;
- a first process chamber coupled with a second side portion of the transfer chamber, the first process chamber forming a first impurity-doped semiconductor layer on a first electrode on the substrate;
- a second process chamber coupled with a third side portion of the transfer chamber, the second process chamber forming a first intrinsic semiconductor layer on the first impurity-doped semiconductor layer;
- a third process chamber coupled with a fourth side portion of the transfer chamber, the third process chamber heating the first intrinsic semiconductor layer to form a second intrinsic semiconductor layer having a gradually varying crystallinity;
- and
- a fourth process chamber coupled with a fifth side portion of the transfer chamber, the fourth process chamber forming a second impurity-doped semiconductor layer on the second intrinsic semiconductor layer.
An apparatus for fabricating a solar, comprising:
- a loading chamber alternately having a vacuum state and an atmospheric pressure state for inputting a substrate;
- a first process chamber coupled with a side portion of the loading chamber, the first process chamber forming a first impurity-doped semiconductor layer on a first electrode on the substrate;
- a second process chamber coupled with a side portion of the first process chamber, the second process chamber forming a first intrinsic semiconductor layer on the first impurity-doped semiconductor layer;
- a third process chamber coupled with a side portion of the second process chamber, the third process chamber heating the first intrinsic semiconductor layer to form a second intrinsic semiconductor layer having a gradually varying crystallinity;
- a fourth process chamber coupled with a side portion of the third process chamber, the fourth process chamber forming a second impurity-doped semiconductor layer on the second intrinsic semiconductor layer;
- and
- an unloading chamber coupled with a side portion of the fourth process chamber, the unloading chamber alternately having a vacuum state and an atmospheric pressure state for outputting the substrate.
A method of fabricating a solar cell, comprising:
- sequentially forming a first electrode and a first impurity-doped semiconductor layer on a transparent substrate;
- forming a light absorbing layer on the first impurity-doped semiconductor layer;
- heating the light absorbing layer;
- and
- sequentially forming a second impurity-doped semiconductor layer and a second electrode on the light absorbing layer.
A method of fabricating a solar cell, comprising:
- sequentially forming a first electrode and a first impurity-doped semiconductor layer on a transparent substrate;
- forming a first intrinsic semiconductor layer on the first impurity-doped semiconductor layer;
- crystallizing the first intrinsic semiconductor layer to form a second intrinsic semiconductor layer having a gradually varying crystallinity;
- and
- sequentially forming a second impurity-doped semiconductor layer and a second electrode on the second intrinsic semiconductor layer.
Dependencies are inferred from the claim text.