Solar cell
AssigneeKyosemi Corporation
InventorJosuke Nakata
Life of this patent
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Abstract
A solar cell which is comprising a p+n+ junction composed of a pn junction capable of generating photovoltaic power on a p-type silicon monocrystal and an n+ diffusion layer and a p+ diffusion layer in which impurities are doped in a high concentration on a portion of the pn junction, has reverse conductivity properties for current flow through a p+n+ junction when a solar cell is biased in the reverse direction. In addition to preventing heat generation and deterioration of a solar cell when any of the solar cells enter shade, without connecting an external bypass diode, when a solar cell module is manufactured using a plurality of solar cells, a reduction in power generation efficiency in the entire solar cell module can also be prevented.
Claims15
A solar cell equipped with a pn junction capable of generating photovoltaic power on a semiconductor substrate, comprising;
- a p+n+ junction comprising a p+ type conductive layer and an n+ type conductive layer in which impurities are doped in a high concentration on a portion of the pn junction, said p+n+ junction having backward diode properties due to a tunneling effect, and
- a structure having a reverse conductivity characteristic for allowing reverse current due to backward diode properties to flow through the p+n+ junction when the solar cell is biased in a reverse direction.
3-4. (canceled)
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Dependencies are inferred from the claim text.