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US 2010/0129657 A1Published application
Method and apparatus for growth of multi-component single crystals
AssigneeRensselaer Polytechnic Institute
InventorPartha Dutta
Life of this patent
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Abstract
A method and apparatus for growth of uniform multi-component single crystals is provided. The single crystal material has at least three elements and has a diameter of at least 50 mm, a dislocation density of less than 100 cm−2 and a radial compositional variation of less than 1%.
Claims20
A composition of matter comprising a single crystal material having at least three elements and comprising a diameter of at least 50 mm, a dislocation density of less than 100 cm−2 and a radial compositional variation of less than 1%.
A single crystal growth apparatus, comprising:
- a vessel;
- a crystal growth seed mounting area in the vessel;
- a crystal growth area in the vessel adjacent to the crystal growth seed mounting area;
- a synthesizing melt area in the vessel;
- a thermal barrier separating the crystal growth area from the synthesizing melt area, the thermal barrier containing at least one opening connecting the crystal growth area to the synthesizing melt area;
- a solute source adapted to provide a solute into the synthesizing melt area;
- a heating element adapted to heat vessel to form a growth melt in the crystal growth area and to form a synthesizing melt in the synthesizing melt area.
4 more elements
A method of making a semiconductor device, comprising:
- providing a single crystal semiconductor boule comprising at least two semiconductor regions having different characteristics in an axial direction of the boule;
- and
- cutting the boule to form a semiconductor portion of the semiconductor device.
Dependencies are inferred from the claim text.