US 2010/0108893 A1 · Devices and Methods for Ultra Thin Photodiode Arrays on Bonded Supports

Abstract

Ultra thin photodiode array structures and fabrication methods are disclosed. The back illuminated or front illuminated photodiode arrays have the active portion fabricated in a semiconductor layer which may be bonded to a supporting substrate layer. The active portion of semiconductor layer may comprise epitaxially grown layer. The isolation regions between pixels of an array may span the epitaxial layer and a semiconductor layer. Electrical contacts to the diodes are made through the bonded substrate or a portion of active layer. Methods of fabrication include steps to form a photodiode array of this type as well as steps to bond this array to supporting substrates. In some embodiments, supporting substrates are temporarily bonded for support of the methods of processing.

Claims20

Dependent claims

A photodiode comprising:

an active region of semiconductor of a first conductivity type having a top surface, a bottom surface and side surfaces;
a first semiconductor layer on the top surface of the active region of semiconductor, the first semiconductor layer being of the first conductivity type and more highly doped than the semiconductor;
a first plurality of regions of the first conductivity type with concentration heavier than that of the semiconductor forming a grid on the top surface of the active region of semiconductor;
a plurality of regions of a second conductivity type interspersed within the first plurality of regions of the first conductivity type and not touching the first semiconductor layer;
a second plurality of regions of the first conductivity type on the bottom surface of the active region of semiconductor, with a concentration heavier than that of the semiconductor and being aligned with the first plurality of regions of the first conductivity type;
a substrate layer bonded to the plurality of regions of the second conductivity type and the second plurality of regions of the first conductivity type;
a first metal region in electrical contact with the second plurality of regions of the first conductivity type through the substrate layer;
and,
a second metal region in electrical contact with the plurality of regions of the second conductivity type through the substrate layer.

6 more elements

A back-illuminated photodiode array with embedded amplification comprising:

a semiconductor on insulator (SOI) substrate with a first and second surface and an insulator layer in between;
wherein the portion of the SOI substrate between the insulator layer and the first surface is a first semiconductor layer having a first conductivity type and a first concentration;
at least one epitaxially grown layer upon the first surface and extending to a third surface, the epitaxial layer(s) having a conductivity of the first or second type;
a plurality of first regions of a first conductivity type with a concentration heavier than the first concentration and epitaxial layer(s) concentrations, extending from a third surface to within the epitaxial layer(s);
a plurality of second regions having a first type conductivity with the concentration heavier than the first and epitaxial layer(s) concentrations, and extending from the first surface of the semiconductor substrate to within the first semiconductor layer and epitaxial layer(s);
a plurality of first isolated regions of a second conductivity type interspersed within the second regions of the first conductivity type, and extending from the first surface of the semiconductor substrate to within the first semiconductor layer and epitaxial layer(s), but not reaching the third surface;
a region of a first conductivity type with concentration heavier that the second concentration on a third surface of the epitaxial layer(s);
a plurality of second isolated regions of a second conductivity type interspersed within the second regions of the first conductivity type and formed inside at least one epitaxial layer wherein at least a portion of the plurality of second regions of the second conductivity type have diffusion partially overlapping with at least a portion of the plurality of first regions of the second conductivity type;
and,
at least a single electrical contact comprising a via through the insulator layer between the first and second surfaces of the semiconductor on insulator substrate.

7 more elements

A back illuminated photodiode array with embedded amplification comprising:

a semiconductor substrate having a conductivity of the first type with a first concentration and with a first and second surface;
the second surface of the said semiconductor substrate being bonded to an insulator substrate;
at least one epitaxially grown layer upon the first surface and extending to a third surface, each layer having the conductivity of the first or second type;
a plurality of first regions of a first conductivity type with a concentration heavier than that of the epitaxial layer(s) and semiconductor substrate, and extending from a third surface to within the epitaxial layer(s);
a plurality of second regions of a first conductivity type having a concentration heavier than that of the epitaxial layer(s) and semiconductor substrate, and extending from a first surface of the semiconductor substrate to within both the semiconductor substrate and epitaxial layer(s);
a plurality of first isolated regions of a second conductivity type interspersed within the second regions of a first conductivity type, and extending from the first surface of the semiconductor substrate to within that semiconductor substrate and epitaxial layer(s), but not reaching the third surface;
a region of a first conductivity type with a concentration heavier than that of the epitaxial layer(s), on a third surface of the epitaxial layer(s);
a plurality of second isolated regions of a second conductivity type interspersed within the second regions of the first conductivity type and formed inside at least one epitaxial layer wherein at least a portion of the plurality of second regions of the second conductivity type have diffusion partially overlapping with at least a portion of the plurality of first regions of the second conductivity type;
and,
at least a single electrical contact through a via in the insulator substrate to at least one the first regions of the second conductivity type to the second surface of the semiconductor substrate.

7 more elements

A back-illuminated photodiode array with internal amplification comprising:

a semiconductor substrate with a first and second surface and a support substrate bonded to the second surface of the semiconductor substrate;
wherein the said semiconductor substrate has a first conductivity type and a first concentration;
at least one epitaxially grown layer upon the first surface and extending to a third surface and having a conductivity of the first or second type;
a plurality of first regions having the first conductivity type with a concentration heavier than the first concentration and epitaxial layer(s) concentrations, extending from a third surface of the epitaxial layer(s) to within the epitaxial layer(s);
a plurality of second regions having a first type conductivity with a concentration heavier that the first concentration and epitaxial layer(s) concentrations, and extending from a first surface of the semiconductor substrate to within the first semiconductor layer and epitaxial layer(s);
a plurality of first isolated regions of a second conductivity type, interspersed within the second regions of a first conductivity type, and extending from the first surface of the semiconductor substrate to within the semiconductor substrate and epitaxial layer(s), but not reaching the third surface;
a region of a first conductivity type with concentration heavier than the epitaxial layer(s) concentration on a third surface of the epitaxial layer;
a plurality of second isolated regions of the first conductivity type interspersed within the second regions of a first conductivity type and formed in epitaxial layer(s) between the third surface and first isolated regions of the second conductivity type;
the concentration of the second isolated regions of the first conductivity type being heavier than that of the epitaxial layer(s) but lower than that of the pluralities of the first and second regions of the first conductivity type;
and,
at least a single electrical contact comprising a via through the support substrate.

8 more elements

A composite ultrathin device comprising:

a semiconductor substrate having the conductivity of a first type with a first concentration and with a first and second surface;
at least one epitaxially grown layer upon the first surface and extending to a third surface, each layer having specific type of conductivity;
a plurality of first doped regions with a concentration heavier than that of the epitaxial layer closest to the first surface of the semiconductor substrate, and extending from this first surface to within both the epitaxial layer(s) and semiconductor substrate underneath the first surface;
a plurality of second doped regions with concentration heavier than that of the epitaxial layer closest to the third surface, and extending from the third surface of the epitaxial layer(s) to within epitaxial layer(s);
a plurality of first vias penetrating from the third surface to within the epitaxial layer;
a plurality of third doped regions interspersed within the first doped regions and extending from the first surface of the semiconductor substrate to within that semiconductor substrate and epitaxial layer(s), but not reaching the third surface;
fourth doped regions having concentration heavier than that of the epitaxial layer closest to the third surface, wherein the forth doped regions are proximate to the third surface of the epitaxial layer;
a plurality of at least partially isolated regions interspersed within the first and second doped regions and formed inside one or several of the epitaxial layers;
each of the at least partially isolated regions having a part of the partially isolated region with a concentration heavier than that of the epitaxial layer in which it is embedded;
wherein at least one region with a concentration heavier than that of the epitaxial layer overlaps at least partially with any of the first, second, third, or fourth doped regions;
a plurality of second vias through at least one doped semiconductor region;
at least a single electrical contact through a third via in at least a portion of the semiconductor substrate to one of the doped regions at the first surface of the semiconductor substrate;
and,
at least a single conductive layer deposited within at least the third via.

11 more elements

A composite ultrathin device comprising:

a semiconductor on insulator (SOI) substrate with a first and second surface and an insulator layer in between;
wherein the portion of the SOI substrate between the insulator layer and the first surface is a first semiconductor layer having a first concentration;
at least one epitaxially grown layer upon the first surface and extending to a third surface, each layer having specific type of conductivity;
a plurality of first doped regions with a concentration heavier than that of the epitaxial layer closest to the first surface of the first semiconductor layer, and extending from this first surface to within both the epitaxial layer(s) and first semiconductor layer underneath the first surface;
a plurality of second doped regions with concentration heavier than that of the epitaxial layer closest to the third surface, and extending from the third surface of the epitaxial layer(s) to within epitaxial layer(s);
a plurality of first vias penetrating from the third surface to within the epitaxial layer;
a plurality of third doped regions interspersed within the first doped regions and extending from the first surface of the first semiconductor layer to within that first semiconductor layer and epitaxial layer(s), but not reaching the third surface;
fourth doped regions having concentration heavier than that of the epitaxial layer closest to the third surface, wherein the forth doped regions are proximate to the third surface of the epitaxial layer;
a plurality of at least partially isolated regions interspersed within the first and second doped regions and formed inside one or several of the epitaxial layers;
each of the at least partially isolated regions having a part of the partially isolated region with a concentration heavier than that of the epitaxial layer in which it is embedded;
wherein at least one region with a concentration heavier than that of the epitaxial layer overlaps at least partially with any of the first, second, third, or fourth doped regions;
a plurality of second vias through at least one doped semiconductor region;
at least a single electrical contact through a third via in the insulator layer in between the first and second surfaces of SOI substrate, to one of the doped regions at the first surface of the semiconductor substrate;
and,
at least a single conductive layer deposited within at least the third via.

12 more elements

Dependencies are inferred from the claim text.

Devices and Methods for Ultra Thin Photodiode Arrays on Bonded Supports

Life of this patent

Devices and Methods for Ultra Thin Photodiode Arrays on Bonded Supports

Life of this patent

Abstract

Claims20