Solid-state high-luminance far ultraviolet light emitting element including highly pure hexagonal boron nitride single crystal, solid-state laser, and solid-state light emitting apparatus
AssigneeNational Institute for Materials Science
InventorsKenji Watanabe, Takashi Taniguchi, Satoshi Koizumi, Hisao Kanda, Masayuki Katagiri, Takatoshi Yamada, Nesladek Milos
Life of this patent
Estimating the term…
Abstract
A solid-state far ultraviolet light emitting element is formed by a hexagonal boron nitride single crystal, excited by electron beam irradiation to emit far ultraviolet light having a maximum light emission peak in a far ultraviolet region at a wavelength of 235 nm or shorter.
Claims13
A solid-state far ultraviolet light emitting element consisting of a hexagonal boron nitride single crystal, excited by electron beam irradiation to emit far ultraviolet light having a maximum light emission peak in a far ultraviolet region at a wavelength of 235 nm or shorter.
A solid-state far ultraviolet laser for generation of laser light with a far ultraviolet region wavelength, comprising:
- a highly pure hexagonal boron nitride single crystal with far ultraviolet light having a maximum light emission peak in a far ultraviolet region at a wavelength of 235 nm or shorter as a direct-type semiconductor solid-state light emitting element, and
- an electron beam irradiation apparatus as an exciting source.
A solid-state far ultraviolet light emitting apparatus, comprising:
- a light emitting layer consisting of a highly pure hexagonal boron nitride single crystal emitting far ultraviolet light with a maximum light emission peak in far ultraviolet region at a wavelength of 235 nm or shorter, and
- exciting means for exciting said light emitting layer combined and encapsulated together into a vacuum container, the light emitting layer being excited to emit far ultraviolet light by operation of the exciting means.
Dependencies are inferred from the claim text.