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US 2010/0081241 A1Published application
Semiconductor device and fabrication method therefor, capacitive element and fabrication method therefor, and mis type semiconductor device and fabrication method therefor
AssigneeEudyna Devices Inc.
InventorNorikazu IWAGAMI
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Abstract
A semiconductor device includes an operating layer made of a semiconductor and a silicon nitride film formed on the operating layer with the use of a mixed gas that includes mono-silane gas, hydrogen gas, and nitrogen gas, by a plasma CVD apparatus, under a condition that a flow rate of the hydrogen gas is 0.2 percent to 5 percent to an overall flow rate.
Claims19
A fabrication method of a semiconductor device comprising:
- forming an operating layer made of a semiconductor;
- and
- forming an insulating film made of a silicon nitride film on the operating layer with a mixed gas that includes mono-silane gas, hydrogen gas, and nitrogen gas, in a plasma CVD apparatus, under a condition that a flow rate of the hydrogen gas is 0.2 percent to 5 percent to an overall flow rate.
A fabrication method of a semiconductor device comprising:
- forming a silicon nitride film on a layer to be selectively processed with the use of a mixed gas that includes mono-silane gas, hydrogen gas, and nitrogen gas, in a plasma CVD apparatus, under a condition that a flow rate of the hydrogen gas is 0.2 percent to 5 percent to an overall flow rate;
- forming a predetermined mask pattern on the silicon nitride film;
- and
- selectively processing the layer with the predetermined mask pattern.
1 more element
A fabrication method of a capacitive element device comprising:
- forming a first metal layer;
- and
- forming an insulating film made of a silicon nitride film on the operating layer with a mixed gas that includes mono-silane gas, hydrogen gas, and nitrogen gas, in a plasma CVD apparatus, under a condition that a flow rate of the hydrogen gas is 0.2 percent to 5 percent to an overall flow rate;
- forming a second metal layer on the insulating layer.
1 more element
Dependencies are inferred from the claim text.