Method of Fabricating a Gate Dielectric for High-K Metal Gate Devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChe-Hao Chang, Cheng-Hao Hou, Chen-Hua Yu, Tai-Bor Wu
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Abstract
The present disclosure provides a method of fabricating a semiconductor device. The method includes providing a substrate, forming an interfacial layer on the substrate by treating the substrate with radicals, and forming a high-k dielectric layer on the interfacial layer. The radicals are selected from the group consisting of hydrous radicals, nitrogen/hydrogen radicals, and sulfur/hydrogen radicals.
Claims20
A method of fabricating a semiconductor device comprising:
- providing a substrate;
- forming an interfacial layer on the substrate by treating the substrate with radicals, wherein the radicals are selected from the group consisting of hydrous radicals, nitrogen/hydrogen radicals, and sulfur/hydrogen radicals;
- and
- forming a high-k dielectric layer on the interfacial layer.
A method of fabricating a semiconductor device comprising:
- providing a substrate;
- performing a first treatment on the substrate to form a first dielectric layer over the substrate, the first treatment including first radicals;
- performing a second treatment on the first dielectric layer to form a second dielectric layer over the substrate, the second treatment including second radicals different from the first radicals, wherein the first and second radicals each includes one of hydrous radicals and nitrogen/hydrogen radicals;
- and
- forming a high-k dielectric layer over the first and second dielectric layers.
A method of fabricating a semiconductor device comprising:
- providing a substrate;
- forming an interfacial layer on the substrate including performing at least one treatment on the substrate, the at least one treatment including one of a plasma process and a UV process, the at least one treatment utilizing radicals selected from the group consisting of hydrous radicals, nitrogen/hydrogen radicals, and sulfur/hydrogen radicals;
- and
- forming a high-k dielectric layer on the interfacial layer.
Dependencies are inferred from the claim text.