Method and apparatus for metal silicide formation
OwnerChristopher S. Olseninventor
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Abstract
Embodiments described herein include methods of forming metal silicide layers using a diffusionless annealing process. In one embodiment a method for forming a metal silicide material on a substrate is provided. The method comprises depositing a metal material over a silicon containing surface of a substrate, depositing a metal nitride material over the metal material, depositing a metallic contact material over the metal nitride material, and exposing the substrate to a diffusionless annealing process to form a metal silicide material. The short time-frame of the diffusionless annealing process reduces the time for the diffusion of nitrogen to the silicon containing interface to form silicon nitride thus minimizing the interfacial resistance.
Claims21
A method for forming a metal silicide material on a substrate, comprising:
- depositing a metal material over a silicon containing surface of a substrate;
- depositing a metal nitride material over the metal material;
- depositing a metallic contact material over the metal nitride material;
- and
- exposing the substrate to a diffusionless annealing process to form a metal silicide material.
-3. (canceled)
A method for forming a metal silicide material on a substrate, comprising:
- depositing a titanium material over a silicon containing surface of a substrate;
- depositing a titanium nitride material over the titanium material;
- depositing a tungsten contact material over the titanium nitride material;
- and
- exposing the substrate to a diffusionless annealing process to form a titanium silicide material.
A method for forming a metal silicide material on a substrate, comprising:
- forming a gate electrode stack comprising:
- depositing a poly-silicon layer over the substrate;
- depositing a first metal layer over the substrate;
- depositing a metal nitride layer over the substrate;
- and
- depositing a second metal layer over the substrate;
- and
- annealing the gate electrode stack with a diffusionless annealing process to form a metal silicide layer.
Dependencies are inferred from the claim text.