Integration of ald tantalum nitride for copper metallization
AssigneeApplied Materials, Inc.
InventorsHua Chung, Nirmalya Maity, Jick Yu, Roderick Craig Mosely, Mei Chang
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Abstract
A method and apparatus for depositing a tantalum nitride barrier layer is provided for use in an integrated processing tool. The tantalum nitride is deposited by atomic layer deposition. The tantalum nitride is removed from the bottom of features in dielectric layers to reveal the conductive material under the deposited tantalum nitride. Optionally, a tantalum layer may be deposited by physical vapor deposition after the tantalum nitride deposition. Optionally, the tantalum nitride deposition and the tantalum deposition may occur in the same processing chamber.
Claims12
A method for forming a metal interconnect on a substrate, comprising:
- exposing the substrate to a nitrogen plasma during a preclean process prior to depositing a tantalum nitride barrier layer;
- depositing the tantalum nitride barrier layer on the substrate by an atomic layer deposition process within a first processing chamber;
- depositing a tantalum barrier layer over the tantalum nitride barrier layer within a second processing chamber;
- plasma etching the tantalum barrier layer and the tantalum nitride barrier layer to expose an underlying conductive material layer within a third processing chamber;
- and
- depositing a seed layer over the underlying conductive material and the tantalum barrier layer within a fourth processing chamber, wherein the first processing chamber, the second processing chamber, the third processing chamber, and the fourth processing chamber are disposed within an integrated tool.
Dependencies are inferred from the claim text.