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US 2010/0075491 A1Published application
Dry etching method of silicon compound film
AssigneeCasio Computer Co., Ltd.
InventorHisao TOSAKA
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Abstract
A silicon compound film is dry etched by parallel-plate type dry etching using an etching gas including at least COF2.
Claims35
A dry etching method of a silicon compound film, wherein a silicon compound film is dry etched by parallel-plate type dry etching using an etching gas including at least COF2.
Dependencies are inferred from the claim text.