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US 2010/0075490 A1Published application
Defect-free junction formation using laser melt annealing of octadecaborane self-amorphizing implants
AssigneeApplied Materials, Inc.
InventorJiping Li
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Abstract
A method and apparatus for implanting a semiconductor substrate with boron clusters. A substrate is implanted with octadecaborane by plasma immersion or ion beam implantation. The substrate surface is then melted, resolidified, and annealed to completely dissociate and activate the boron clusters.
Claims22
A method of treating a substrate, comprising:
- implanting boron macromolecules into a surface of the substrate;
- melting the surface of the substrate implanted with the boron macromolecules;
- and
- resolidifying the surface of the substrate implanted with the boron macromolecules.
1 more element
A method of treating a substrate, comprising:
- implanting octadecaborane into the surface of the substrate;
- melting the implanted surface of the substrate;
- resolidifying the surface of the substrate;
- annealing the surface of the substrate;
- and
- oxidizing the surface of the substrate.
3 more elements
A method of forming a boron doped semiconductor substrate, comprising:
- implanting boron atoms into a portion of the substrate by directing a beam of octadecaborane ions toward the substrate, the ions having an average energy less than about 1 keV;
- preheating the implanted portion of the substrate to a first temperature;
- melting a surface of the implanted portion by directing laser energy toward the surface for a duration less than about 0.5 sec;
- resolidifying the implanted portion by cooling the substrate at a controlled rate less than about 200° C./sec;
- and
- annealing the substrate by maintaining a temperature of the substrate at about 400° C. or higher for at least about 1 minute.
3 more elements
Dependencies are inferred from the claim text.