Crystallization method
AssigneeCommissariat a l'Energie Atomique
InventorPhilippe Bouchut
Life of this patent
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Abstract
To crystallize a material, a thin layer of amorphous or polycrystalline material is deposited on at least one area of the surface of a top part of a substrate. A metal layer is then deposited on at least one area of the thin layer. Thermal treatment is then performed to enable crystalline growth of the material of the thin layer, resulting in: a rapid temperature increase of the top part of the substrate until liquid or overmelted liquid state is achieved, and heat transfer from the interface between the top part of the substrate and the thin layer to the interface between the thin layer and the metal layer.
Claims13
A solid phase crystallization method, comprising the following successive steps:
- a) depositing at least one thin layer of amorphous or polycrystalline material on at least one area of the surface of a top part of a substrate,
- b) depositing of at least one metal layer with a thickness comprised between 1 nm and 20 nm, advantageously between 5 nm and 10 nm, on an area of said thin layer, the material constituting the top part of the substrate being, after step b), in an amorphous state able to change to a liquid or overmelted liquid state,
- c) and performing thermal treatment to enable crystalline growth of the material of the thin layer, simultaneously causing:
- a temperature increase of the top part of the substrate at a rate of more than 100K per second until the material of the top part of the substrate goes to liquid or overmelted liquid state,
- a heat transfer from the interface between the top part of the substrate and the thin layer to the interface between the thin layer and the metal layer.
Dependencies are inferred from the claim text.