Formation of single crystal semiconductor nanowires
AssigneeImec
InventorPhilippe M. Vereecken
Life of this patent
Estimating the term…
Abstract
A method is provided for growing mono-crystalline nanostructures onto a substrate. The method comprises at least the steps of first providing a pattern onto a main surface of the substrate wherein said pattern has openings extending to the surface of the substrate, providing a metal into the openings of the pattern on the exposed main surface, at least partly filling the opening with amorphous material, and then annealing the substrate at temperatures between 300° C. and 1000° C. thereby transforming the amorphous material into a mono-crystalline material by metal mediated crystallization to form the mono-crystalline nanostructure.
Claims17
A method for growing crystalline nanostructures onto a substrate, the method comprising:
- providing a pattern on a main surface of the substrate, wherein the pattern has at least one opening, the opening extending from a surface of the pattern to the main surface of the substrate, and wherein at least a portion of the main surface of the substrate is exposed;
- providing a metal in the opening of the pattern on the exposed main surface;
- at least partly filling the opening with an amorphous material, and
- annealing the amorphous material and the metal 3 at a temperature of from about 300° C. to about 1000° C., thereby transforming at least a part of the amorphous material into crystalline material by metal mediated crystallization to form a crystalline nanostructure.
Dependencies are inferred from the claim text.