Integrated emitter formation and passivation

A method of forming a p-n junction in a p-type crystalline silicon substrate, comprising:

• placing the p-type crystalline silicon substrate inside a vacuum deposition chamber;
• delivering a mixture of precursors comprising a silicon-containing compound, a hydrogen-containing compound, and a phosphorous-containing compound into the vacuum deposition chamber;
• depositing an n-type amorphous silicon film on the first surface of the silicon substrate;
• and
• heating the silicon substrate and n-type amorphous silicon in an oxygen environment until the p-n iunction is formed in the p-type crystalline silicon substrate and the amorphous silicon film is completely oxidized.

A method for forming a p-n junction on an p-type crystalline silicon substrate comprising:

• placing the p-type crystalline silicon substrate inside a vacuum deposition chamber;
• delivering a mixture of precursors comprising a silicon-containing compound, a hydrogen-containing compound, and a phosphorous-containing compound into the vacuum deposition chamber;
• depositing an n-type amorphous silicon film on a surface of the p-type crystalline silicon substrate;
• and
• heating the p-type crystalline silicon substrate and the n-type amorphous layer in an oxygen environment until the amorphous silicon film forms a crystalline grain structure and at least a portion of the crystalline grain structure is oxidized.