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US 2010/0075478 A1Published application
Method for photoresist pattern removal
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorChing-Yu Chang
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Abstract
The present disclosure provides a method for making a semiconductor device. The method includes forming a sacrificial layer on a substrate; forming a patterned resist layer on the sacrificial layer; performing an ion implantation to the substrate; applying a first wet etch solution to remove the patterned photoresist layer; and applying a second wet etch solution to remove the sacrificial layer.
Claims21
A method for making a semiconductor device comprising:
- forming a sacrificial layer on a substrate;
- forming a patterned resist layer on the sacrificial layer;
- performing an ion implantation to the substrate;
- applying a first wet etch solution to remove the patterned photoresist layer;
- and
- applying a second wet etch solution to remove the sacrificial layer.
3 more elements
A method for making a semiconductor device comprising:
- forming a sacrificial layer on a substrate;
- forming a patterned resist layer on the sacrificial layer;
- performing an ion implantation to the substrate;
- applying a chemical solution to remove the patterned photoresist layer;
- and
- applying an acid solution to remove the sacrificial layer.
3 more elements
Dependencies are inferred from the claim text.