Method of Manufacturing Semiconductor Device
AssigneeHynix Semiconductor Inc.
InventorJi Hyun Seo
Life of this patent
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Abstract
An embodiment of the disclosure relates to a method of manufacturing semiconductor devices. According to this embodiment, a tunnel insulating layer, a conductive layer for a floating gate, and a hard mask layer are sequentially formed over a semiconductor substrate. Isolation trenches are formed by etching the hard mask layer, the conductive layer for the floating gate, the tunnel insulating layer, and the semiconductor substrate. Isolation structures are formed by filling the isolation trenches with an insulating layer. Upper sidewalls of the isolation trenches are exposed by etching predetermined thickness of the isolation structures. Ion implantation regions are formed in the exposed upper sidewalls of the isolation trenches by performing an ion implantation process.
Claims23
A method of manufacturing semiconductor devices, comprising:
- forming a tunnel insulating layer, a conductive layer for a floating gate, and a hard mask layer over a semiconductor substrate;
- forming isolation trenches having sidewalls by etching the hard mask layer, the conductive layer for the floating gate, the tunnel insulating layer, and the semiconductor substrate;
- forming isolation structures by filling the isolation trenches with an insulating layer;
- exposing upper sidewalls of the isolation trenches by etching predetermined thickness of the isolation structures;
- and
- forming ion implantation regions in the exposed upper sidewalls of the isolation trenches by performing an ion implantation process.
A method of manufacturing semiconductor devices, comprising:
- forming a tunnel insulating layer and a conductive layer for a floating gate over a semiconductor substrate;
- forming isolation trenches having sidewalls by etching the conductive layer for the floating gate, the tunnel insulating layer, and the semiconductor substrate;
- forming isolation structures by filling the isolation trenches with an insulating layer;
- exposing upper sidewalls of the isolation trenches by etching predetermined thickness of the isolation structures;
- forming ion implantation regions in the exposed upper sidewalls of the isolation trenches by performing a first ion implantation process;
- exposing an active region of the semiconductor substrate by etching the conductive layer for the floating gate and the tunnel insulating layer in a direction of a word line;
- and
- forming a junction region in the exposed active region by performing a second ion implantation process.
A method of manufacturing semiconductor devices, comprising:
- forming isolation trenches having sidewalls by etching a semiconductor substrate;
- forming isolation structures by filling the isolation trenches with an insulating layer;
- exposing upper sidewalls of the isolation trenches by etching predetermined thickness of the isolation structures;
- and
- forming ion implantation regions in the exposed upper sidewalls of the isolation trenches by performing an ion implantation process.
Dependencies are inferred from the claim text.