Method for making thin transistor
AssigneesTsinghua University, Hon Hai Precision Industry Co., Ltd.
InventorsKai Liu, Kai-Li Jiang, Shou-Shan Fan
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Abstract
A method for making a thin film transistor, the method comprising the steps of: (a) providing a carbon nanotube array and an insulating substrate; (b) pulling out a carbon nanotube film from the carbon nanotube array by using a tool; (c) placing at least one carbon nanotube film on a surface of the insulating substrate, to form a carbon nanotube layer thereon; (d) forming a source electrode and a drain electrode; wherein the source electrode and the drain electrode being spaced therebetween, and electrically connected to the carbon nanotube layer; and (e) covering the carbon nanotube layer with an insulating layer, and a gate electrode being located on the insulating layer.
Claims18
A method for making a thin film transistor, the method comprising the steps of:
- (a) providing a carbon nanotube array and an insulating substrate;
- (b) pulling out a carbon nanotube film from the carbon nanotube array by using a tool;
- (c) placing at least one carbon nanotube film on a surface of the insulating substrate, to form a carbon nanotube layer thereon;
- (d) forming a source electrode, a drain electrode, and a gate electrode;
- (e) covering the carbon nanotube layer with an insulating layer, and
- wherein the source electrode and the drain electrode are spaced therebetween, and electrically connected to the carbon nanotube layer;
- the gate electrode is located on the insulating layer and electrically insulated from the carbon nanotube layer by the insulating layer.
A method for making a thin film transistor, the method comprising the steps of:
- (a′) providing a carbon nanotube array and an insulating substrate;
- (b′) pulling out a carbon nanotube film from the carbon nanotube array by using a tool;
- (c′) forming a gate electrode, a source electrode, and a drain electrode;
- (d′) covering the gate electrode with an insulating layer;
- (e′) laying at least one carbon nanotube film on the insulating layer, to form a carbon nanotube layer thereon;
- and
- wherein the gate electrode is located on the insulating substrate, and the source electrode and the drain electrode are electrically connected to the carbon nanotube layer.
A method for making thin film transistors, the method comprising the steps of:
- (a″) providing a carbon nanotube array and an insulating substrate;
- (b″) pulling out a carbon nanotube film from the carbon nanotube array by using a tool;
- (c″) placing at least one carbon nanotube film on a surface of the insulating substrate;
- (d″) patterning the at least one carbon nanotube film, to form a plurality of carbon nanotube layers;
- (e″) forming a plurality pairs of source electrodes, drain electrodes, and a plurality of gate electrodes;
- wherein the source electrodes and the drain electrodes are electrically connected to the carbon nanotube layers, the gate electrodes are electrically insulated from the carbon nanotube layers by the insulating layers.
Dependencies are inferred from the claim text.