Non-volatile electromechanical field effect devices and circuits using same and methods of forming same

A method of forming a memory array capable of storing multiple memory states, the method comprising:

• providing a plurality of memory devices, each memory device comprising:
• a gate, a source, and a drain, with a channel between the source and the drain;
• and
• a nanotube switch comprising a nanotube element, a control gate in electrical contact with the nanotube switch, and a release gate,
• wherein the nanotube switch is programmable into a first memory state in which the nanotube element deflects into electrical contact with the gate in response to a first electrical state at the control gate and the release gate,
• wherein the nanotube switch is programmable into a second memory state in which the nanotube element deflects out of electrical contact with the gate in response to a second electrical state at the control gate and the release gate, and
• wherein the nanotube element is laterally offset from the channel.