Method of manufacturing stacked-layered thin film solar cell with a light-absorbing layer having band gradient
AssigneeNexpower Technology Corp.
InventorFeng-Chien HSIEH
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Abstract
A method of manufacturing a stacked-layered thin film solar cell with a light-absorbing layer having a band gradient is provided. The stacked-layered thin film solar cell includes a substrate, a back electrode layer, a light-absorbing layer, a buffer layer, a window layer, and a top electrode layer stacked up sequentially. The light-absorbing layer has a band gradient structure and is essentially a group I-III-VI compound, wherein the group III elements at least include indium (In) and aluminum (Al). Moreover, the Al/In ratio in the upper half portion of the light-absorbing layer is greater than that in the lower half portion of the light-absorbing layer, wherein the upper half portion is proximate to a light incident surface.
Claims17
A method of manufacturing a stacked-layered thin film solar cell with a light-absorbing layer having a band gradient, comprising steps of:
- providing a substrate;
- forming a back electrode layer on the substrate;
- forming sequentially a first metal layer, a second metal layer, and a third metal layer on the back electrode layer, wherein the first metal layer, the second metal layer, and the third metal layer are a group III element, a group I element, and a group III element, respectively;
- providing a group VI element and a reaction process for allowing the first metal layer, the second metal layer, the third metal layer, and the group VI element to form a light-absorbing layer of a I-III-VI compound, wherein the light-absorbing layer has a band gradient, the group III elements comprise indium (In) and aluminum (Al), and an aluminum to indium (Al/In) ratio in an upper half portion of the light-absorbing layer is greater than that in a lower half portion of the light-absorbing layer, the upper half portion being proximate to a light incident surface;
- forming a buffer layer on the light-absorbing layer;
- forming a window layer on the buffer layer;
- and
- forming a top electrode layer.
Dependencies are inferred from the claim text.