Method and system for producing films for devices such as solar cells from semiconductor powders or dust
AssigneeSRI International
InventorANGEL SANJURJO
Life of this patent
Estimating the term…
Abstract
The present invention relates generally to production of photoelectric grade films or cells from semiconductor powders or dust. In one embodiment, the present invention provides a method for producing a photoelectric grade film from a semiconductor powder. The method includes providing a substrate, coating the substrate with a layer of the semiconductor powder and moving the substrate with the layer of the semiconductor powder under an energy source at a predefined rate, wherein the predefined rate is sufficient to melt the semiconductor powder by the energy source and to cool the substrate such that substantially all impurities are moved to an edge of the substrate.
Claims21
A method for producing a photoelectric grade film from a semiconductor powder, comprising:
- providing a substrate;
- coating said substrate with a layer of said semiconductor powder;
- and
- moving said substrate with said layer of said semiconductor powder under an energy source at a predefined rate, wherein said predefined rate is sufficient to melt said semiconductor powder by said energy source and to cool said substrate such that substantially all impurities are moved to an edge of said substrate.
A system for producing a photoelectric grade film from a semiconductor powder, comprising:
- a substrate coated with a semiconductor powder;
- at least one energy source;
- and
- a moving means for moving said substrate with said layer of semiconductor powder under said at least one energy source at a predefined rate, wherein said predefined rate is sufficient to melt said powder by said energy source and to cool said substrate such that substantially all impurities are moved to an edge of said substrate.
A method for producing a photoelectric grade film from a semiconductor powder, comprising:
- providing a substrate;
- coating said substrate with a layer of said semiconductor powder;
- and
- moving an energy source over said substrate with said layer of said semiconductor powder at a predefined rate, wherein said predefined rate is sufficient to melt said semiconductor powder by said energy source and to cool said substrate such that substantially all impurities are moved to an edge of said substrate.
Dependencies are inferred from the claim text.