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US 2010/0075449 A1Published application
Method of forming amorphous silicon layer and method of fabricating lcd using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsTae-Hyung HWANG, Hyung-Ii Jeon, Seok-Joon Hong
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Abstract
Methods and systems for forming an amorphous silicon layer are disclosed for one or more embodiments. For example, a substrate may be provided, and an amorphous silicon layer, in which a ratio of Si—H to Si—H2 has a value equal to or less than 4 to 1, may be formed on the substrate using chemical vapor deposition equipment.
Claims20
A method of forming an amorphous silicon layer, the method comprising:
- preparing a substrate;
- and
- forming an amorphous silicon layer in which a ratio of Si—H bonding to Si—H2 bonding has a value equal to or less than 4 to 1, the amorphous silicon layer being formed on the substrate using chemical vapor deposition equipment,
- wherein the chemical vapor deposition equipment comprises:
- a chamber;
- first and second electrodes in the chamber, the first and second electrodes facing each other;
- a gas supply to supply SiH4 and H2 to the chamber;
- and
- a power supply to apply power to the first and second electrodes.
6 more elements
A method of forming an amorphous silicon layer, the method comprising:
- preparing a substrate;
- and
- forming an amorphous silicon layer on the substrate using chemical vapor deposition equipment,
- wherein the chemical vapor deposition equipment comprises:
- a chamber;
- first and second electrodes positioned in the chamber, the first and second electrodes facing each other;
- a gas supply unit to supply SiH4 and H2 to the chamber;
- and
- a power supply to apply power to the first and second electrodes,
- wherein a pressure of the chamber is about 1.6 Torr to about 3.5 Torr, a percentage of SiH4 to H2to supply to the gas supply unit has a value of about 1% by volume to about 4% by volume, a power is about 150 W to about 500 W, a distance between the first and second electrodes is about 1.3 cm to about 2.5 cm, and a temperature of the chamber is about 100° C. to about 180° C.
7 more elements
A method of fabricating a liquid crystal display, the method comprising:
- providing first and second substrates facing each other;
- forming a thin film transistor comprising a semiconductor layer having an amorphous silicon layer, in which a ratio of Si—H bonding to Si—H2 bonding has a value equal to or less than 4 to 1, on the substrate;
- and
- forming a liquid crystal layer between the first and second substrates.
1 more element
Dependencies are inferred from the claim text.