US 2010/0075445 A1 · Silicon Microchannel Plate Devices With Smooth Pores And Precise Dimensions

Abstract

A method of fabricating a microchannel plate includes forming a plurality of pores in a silicon substrate. The plurality of pores is oxidized, thereby consuming silicon at surfaces of the plurality of pores and forming a silicon dioxide layer over the plurality of pores. At least a portion of the silicon dioxide layer is stripped, which reduces a surface roughness of the plurality of pores. A semiconducting layer can be deposited onto the surface of the silicon dioxide layer. The semiconducting layer is then oxidized, thereby consuming at least some of the polysilicon or amorphous silicon layer and forming an insulating layer. Resistive and secondary electron emissive layers are then deposited on the insulating layer by atomic layer deposition.

Claims34

Dependent claims

A method of fabricating a microchannel plate, the method comprising:

a. forming a plurality of pores in a silicon substrate;
b. oxidizing the plurality of pores, thereby consuming silicon at surfaces of the plurality of pores and forming a silicon dioxide layer over the plurality of pores;
c. stripping at least a portion of the silicon dioxide layer, thereby reducing a surface roughness of the plurality of pores;
and
d. depositing resistive and secondary electron emissive layers on the surface of the plurality of pores with reduced surface roughness.

2 more elements

Dependencies are inferred from the claim text.

Silicon Microchannel Plate Devices With Smooth Pores And Precise Dimensions

Life of this patent

Silicon Microchannel Plate Devices With Smooth Pores And Precise Dimensions

Life of this patent

Abstract

Claims34