US 2010/0074290 A1Published application

Semiconductor laser device

OwnerMasao Kawaguchi, Masaaki Yuriinventors

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Abstract

A semiconductor laser device has a stacked structure formed on a main surface of a substrate (1) and including an MQW active layer (5) made of a group-III nitride semiconductor. The stacked structure has a stripe-shaped waveguide formed on a main surface thereof. One of opposing facets of the waveguide is a light emitting facet. A first region having a forbidden band width Eg1 in the MQW active layer (5), and a second region located adjacent to the first region and having a forbidden band width Eg2 in the MQW active layer (5) (where Eg2≠Eg1) are formed around the recess (2). The waveguide is formed so as to include the first region and the second region, and so as not to include the stepped region. The light emitting facet is formed in one (5a) of the first region and the second region, which has a shorter light absorption wavelength.

Claims10

Dependent claims

A semiconductor laser device, comprising:

a stacked structure having each layer made of a group-III nitride semiconductor, including an active layer, and having a stepped region selectively formed therein, wherein
the stacked structure has a stripe-shaped waveguide extending in a plane parallel to a main surface of the stacked structure,
at least one of opposing facets of the waveguide is a light emitting facet,
a first region having a forbidden band width Eg1 in the active layer, and a second region located adjacent to the first region and having a forbidden band width Eg2 in the active layer (where Eg2≠Eg1) are formed around the stepped region,
the waveguide is formed so as to include the first region and the second region, and so as not to include the stepped region, and
the light emitting facet is formed in one of the first region and the second region, which has a shorter light absorption wavelength.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application: 12/513,482Filed 15 Oct 2008
Priority: JP 2007-2856872 Nov 2007
Published: 25 Mar 2010
Term ends: Not estimatedThe source records don’t support an estimate.

Classification10 codes

H01S 5/164
Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface: with window regions…
B82Y 20/00
Nanooptics
H01S 5/0207
Substrates, e.g. growth, shape, material, removal or bonding: substrates having a special shape
H01S 5/10
Semiconductor lasers: construction or shape of the optical resonator , e.g. extended or external cavity, coupled cavities, bent-guide, varying…