Read operation for non-volatile storage with compensation for coupling
AssigneeSanDisk Corporation
InventorNima Mokhlesi
Life of this patent
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Abstract
Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent floating gates (or other adjacent charge storing elements). The problem occurs most pronouncedly between sets of adjacent memory cells that have been programmed at different times. To account for this coupling, the read process for a particular memory cell will provide compensation to an adjacent memory cell in order to reduce the coupling effect that the adjacent memory cell has on the particular memory cell.
Claims20
A non-volatile storage system, comprising:
- a memory array that includes a plurality of non-volatile storage elements, the plurality of non-volatile storage elements includes a first non-volatile storage element and a second non-volatile storage element;
- and
- one or more managing circuits in communication with the plurality of non-volatile storage elements, the one or more managing circuits configure a read process for the second non-volatile storage element based on information stored in the first non-volatile storage element, the one or more managing circuits perform the read process for the second non-volatile storage element.
A method for reading from a memory device that includes plurality of non-volatile storage elements storing user data, the method comprising:
- configuring a read process for a target non-volatile storage element of the plurality of non-volatile storage elements based on information stored in a non-volatile storage element of the plurality of non-volatile storage elements other than the target non-volatile storage element;
- and
- performing the read process for the target non-volatile storage element.
A method for reading from a memory device that includes plurality of non-volatile storage elements storing user data, the plurality of non-volatile storage elements includes a first non-volatile storage element and a second non-volatile storage element, the method comprising:
- choosing a signal based on data stored in the first non-volatile storage element;
- and
- performing a read process for the second non-volatile storage element, the performing the read process includes sensing information for the second non-volatile storage element in response to applying the chosen signal to the first non-volatile storage element.
A non-volatile storage system, comprising:
- a memory array that includes a plurality of non-volatile storage elements, the plurality of non-volatile storage elements includes a first non-volatile storage element and a second non-volatile storage element;
- and
- one or more managing circuits in communication with the plurality of non-volatile storage elements, the one or more managing circuits choose a control gate signal from a plurality of signals for the first non-volatile storage element based on data stored in the first non-volatile storage element, the one or more managing circuits perform a read process for the second target non-volatile storage element that includes applying the chosen control gate signal to the first non-volatile storage element and reading data in the second target non-volatile storage element in response to the chosen control gate signal being applied to the first non-volatile storage element.
Dependencies are inferred from the claim text.