Method for Programming Nand Type Flash Memory
AssigneeHynix Semiconductor Inc.
InventorSe Yun Lim
Life of this patent
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Abstract
Disclosed is a method for programming a flash memory device capable of preventing a threshold voltage distribution of a memory cell from being moved due to a pass disturbance of the memory cell programmed initially at a program operation performed on a page-unit basis. The method for programming a NAND flash memory device including a plurality of cell strings having N memory cells connected, in which gates of the memory cells are connected to a word line, the method is performed by applying a program voltage to at least two word lines simultaneously including a selected word line.
Claims13
A method for programming a NAND flash memory device including a plurality of cell strings having N memory cells connected, in which gates of the memory cells are connected to a word line,
- wherein the method is performed by applying a program voltage to at least two word lines simultaneously including a selected word line.
A method for programming a NAND flash memory device including a plurality of cell strings having N memory cells connected, in which gates of the memory cells are connected to a word line, comprising:
- applying a program voltage to at least two word lines simultaneously including a selected word line,
- applying a pass voltage to unselected word lines except the word lines applied the program voltage including the selected word line.
Dependencies are inferred from the claim text.