Data state-based temperature compensation during sensing in non-volatile memory

A method for operating non-volatile storage, comprising:

• applying a voltage to a control gate of at least one selected non-volatile storage element in a NAND string via a selected word line, the voltage separates lower and higher states;
• if the at least one selected non-volatile storage element is made conductive by the applying the voltage, inducing a current through the selected non-volatile storage element;
• and
• comparing the current to a reference current which is based on a reference temperature coefficient of the higher state.

A method for operating non-volatile storage, comprising:

• applying a plurality of voltages, one at a time, to a control gate of a selected non-volatile storage element;
• while applying each voltage, coupling, to the selected non-volatile storage element, a pre-charged capacitor, the capacitor discharges into the selected non-volatile storage element when the selected non-volatile storage element is in a conductive state;
• and
• after a discharge time which differs for each of the voltages, determining whether the selected non-volatile storage element is in the conductive state based on whether the capacitor has discharged below a trip point.

A non-volatile storage system, comprising:

• a set of non-volatile storage elements including a selected non-volatile storage element having a control gate;
• at least one current source;
• and
• at least one control circuit, the at least one control circuit applies voltages, one at a time, to the control gate of the selected non-volatile storage element of the set, while applying each voltage, couples, to the selected non-volatile storage element, the at least one current source, senses a current which flows through the selected non-volatile storage element, and compares the sensed current to a reference current which is different for at least two of the voltages.