Semiconductor Device and Method of Fabricating the Same

A flash memory device comprising:

• a trap unit disposed on a semiconductor substrate to trap charges;
• a channel region that includes a first channel region corresponding to the trap unit and a second channel region adjacent to the first channel region;
• a source region and a drain region spaced apart on the semiconductor substrate, having the channel region therebetween;
• and
• a gate electrode disposed on the first channel region and the second channel region.

A method of driving a flash memory device that includes a source region and a drain region that are spaced apart on a substrate;

• a first channel region that is formed between the source region and the drain region;
• a second channel region that is adjacent the first channel region and formed between the source region and the drain region;
• a charge trap unit that corresponds to the first channel region;
• and a gate electrode disposed on the first channel region and the second channel region, the method comprising:
• programming memory cells by injecting hot electrons into the charge trap unit;
• and
• erasing the memory cells by injecting hot holes into the charge trap unit.