Piezo-driven non-volatile memory cell with hysteretic resistance

A non-volatile memory array, comprising:

• a plurality of piezoelectrically programmed, non-volatile memory cells arranged in rows and columns, with each memory cell further comprising:
• a programmable piezo-resistive hysteretic material (PRHM) that is capable of being interconverted between a low resistance state and high resistance state through applied pressure cycling thereto;
• a piezoelectric material mechanically coupled to the PHRM such that an applied voltage across the piezoelectric material results in one of a tensile or compressive stress applied to the PRHM, depending upon the polarity of the applied voltage;
• and
• one or more electrodes in electrical communication with the PRHM, wherein the one or more electrodes are configured to provide a write programming current path through the piezoelectric material and a read current path through the PRHM, wherein the piezoelectric material is disposed between a first and a second of the electrodes, the PRHM is disposed between the second and a third of the electrodes, the write programming current path includes the first electrode, the piezoelectric material and the second electrode, and the read current path includes the third electrode, the PRHM and the second electrode;
• a plurality of read lines, each associated with a column of the array, with each read line coupled to the third electrode of each memory cell in the associated column;
• a plurality of write lines, each associated with a column of the array, with each write line coupled to the first electrode of each memory cell in the associated column;
• and
• a plurality of common lines, each associated with a row of the array, with each common line coupled to the second electrode of each memory cell in the associated row.

A non-volatile memory array, comprising:

• a plurality of piezoelectrically programmed, non-volatile memory cells arranged in rows and columns, with each memory cell further comprising:
• a programmable piezo-resistive hysteretic material (PRHM) that is capable of being interconverted between a low resistance state and high resistance state through applied pressure cycling thereto;
• a piezoelectric material mechanically coupled to the PHRM such that an applied voltage across the piezoelectric material results in one of a tensile or compressive stress applied to the PRHM, depending upon the polarity of the applied voltage;
• and
• one or more electrodes in electrical communication with the PRHM, wherein the one or more electrodes are configured to provide a write programming current path through the piezoelectric material and a read current path through the PRHM, wherein the piezoelectric material is disposed between a first and a second of the electrodes, the PRHM is disposed between the second and a third of the electrodes, the write programming current path includes the first electrode, the piezoelectric material and the second electrode, and the read current path includes the third electrode, the PRHM and the second electrode;
• a plurality of read/write lines, each associated with a column of the array, with each read/write line coupled to the first and third electrodes of each memory cell in the associated column;
• a plurality of row enable lines, each associated with a row of the array, with each row enable line coupled to the second electrode of each memory cell in the associated row;
• and
• a switching transistor associated with each cell, the switching transistor configured to selectively couple the second electrode of the associated memory cell to ground.

A method of forming a piezoelectrically programmed, non-volatile memory cell structure, the method comprising:

• forming a piezoelectric material between a first electrode and a second electrode;
• forming a programmable piezo-resistive hysteretic material (PRHM) between the second electrode and a third electrode, the PRHM capable of being interconverted between a low resistance state and high resistance state through applied pressure cycling thereto;
• wherein the piezoelectric material is mechanically coupled to the PHRM such that an applied voltage across the piezoelectric material results in one of a tensile or compressive stress applied to the PRHM, depending upon the polarity of the applied voltage;
• and
• wherein the first and second electrodes are configured to provide a write programming current path through the piezoelectric material and the second and third electrodes are configured to provide a read current path through the PRHM.