Semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorSatoshi INABA
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Abstract
In one aspect of the present invention, a semiconductor device A semiconductor device may include a SRAM cell having a first inverter, a second inverter, a first transfer transistor and a second transistor, the first inverter having a first load transistor and a first driver transistor connected to the first load transistor, the second inverter having a second load transistor and a second driver transistor connected to the second load transistor, a voltage supplying circuit configured to supply a voltage to one of the terminals of the first driver transistor and one of the terminals of the second driver transistor, the voltage which is one of more than a GND voltage and less than a GND voltage.
Claims5
A semiconductor device, comprising:
- a SRAM cell having a first inverter, a second inverter, a first transfer transistor and a second transistor, the first inverter having a first load transistor and a first driver transistor connected to the first load transistor, the second inverter having a second load transistor and a second driver transistor connected to the second load transistor,
- a voltage supplying circuit configured to supply a voltage to a well region of the first transfer transistor and a well region of the second transfer transistor, the voltage being one of more than a GND voltage and less than a GND voltage
- wherein the voltage supplying circuit supplies a voltage which is less than a GND voltage to the well region of the first transfer transistor and the well region of the second transfer transistor when data is started to be written to the SRAM cell.
Dependencies are inferred from the claim text.