Multi-resistive integrated circuit memory

An integrated circuit memory device, comprising:

• a multi-resistive memory array;
• a circuit connected to the multi-resistive memory array and adapted to provide a stable voltage to the multi-resistive memory array, the circuit including a capacitor, the capacitor includes:
• a layer of conductive material, the layer of conductive material including at least a first portion and a second portion, wherein the first portion and the second portion are arranged in a predetermined pattern relative to one another to provide a selected amount of juxtaposed surface area between the first and second portions and the first and second portions being separated by a gap of a chosen width to provide a predetermined capacitance;
• and
• a layer of insulation material disposed at least between the first and second portions;
• and
• a sensor device connected to the multi-resistive memory array and adapted to read information from the multi-resistive memory array.