High-voltage-resistant rectifier with standard CMOS transistors
AssigneeShanghai Kiloway Electronics Inc
InventorsJianming Wang, Yusheng Cao, Junhua Mao, Xiangdong Wu
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AssigneeShanghai Kiloway Electronics Inc
InventorsJianming Wang, Yusheng Cao, Junhua Mao, Xiangdong Wu
Estimating the term…
A high-voltage-resistant rectifier with standard CMOS transistors is disclosed in present invention. In a bridge full-wave rectifier comprising four MOS transistors, extra transistors are connected in series between the transistors which endure high voltage and the input to decrease the voltage imposed on the gate of them; moreover, the present invention provides a way to divide voltage imposed between the gate and the source of the said transistors by connecting in series with extra transistors, so it is achieved to implement a high-voltage-resistant rectifier with standard low voltage CMOS transistors without additional process complexity, and decreases manufacture and process costs.
A high-voltage-resistant rectifier implemented with standard CMOS transistors, comprising from a first MOS transistor to a fourth MOS transistor as base structure, characterized in that includes:
A high-voltage-resistant rectifier with standard CMOS transistors, characterized in that includes:
A high-voltage-resistant rectifier with standard CMOS transistors, characterized in that includes:
A high-voltage-resistant rectifier with standard CMOS transistors, characterized in that includes:
A high-voltage-resistant rectifier with standard CMOS transistors, characterized in that includes:
A high-voltage-resistant rectifier with standard CMOS transistors, characterized in that includes:
A high-voltage-resistant rectifier with standard CMOS transistors, characterized in that includes:
Dependencies are inferred from the claim text.