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US 2010/0073671 A1Published application
Alignment mark and defect inspection method
AssigneeUnited Microelectronics Corp.
InventorsLing-Chun Chou, Ming-Tsung Chen, Hsi-Hua Liu, Shuen-Cheng Lei, Po-Chao Tsao
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Abstract
A defect inspection method is disclosed. A first type defect inspection system is used to perform a first defect inspection by aligning to an alignment mark on a wafer as a reference point for the first defect inspection. A fabrication process is performed on the wafer thereafter, and a second defect inspection is performed by using a second type defect inspection system to align the alignment mark on the wafer as the reference point for the second defect inspection.
Claims19
A defect inspection method, comprising:
- performing a first defect inspection by a first type defect inspection system by aligning to an alignment mark on a wafer as a reference point for the first defect inspection;
- performing at least one fabrication process to the wafer;
- and
- performing a second defect inspection by a second type defect inspection system by aligning to the alignment mark on the wafer as a reference point for the second defect inspection.
1 more element
An alignment mark for defect inspection, comprising:
- a semiconductor substrate;
- a first type well disposed in the semiconductor substrate;
- a second type doping region disposed in the first type well;
- a dielectric layer disposed on the semiconductor substrate to cover the first type well and the second type doping region;
- and
- a plurality of conductive plugs formed in the dielectric layer for connecting to the second type doping region.
3 more elements
Dependencies are inferred from the claim text.