Masks and Methods of Manufacture Thereof
AssigneeInfineon Technologies AG
InventorsUwe Paul Schroeder, Chung-Hsi J. Wu
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Abstract
Lithography masks and methods of manufacture thereof are disclosed. A preferred embodiment includes a method of generating an assist feature of a lithography mask. The method includes providing a layout for a material layer of a semiconductor device, the layout including a pattern for at least one feature of the semiconductor device. The method includes forming an assist feature in the pattern for the at least one feature, wherein the assist feature extends completely through the pattern for the at least one feature.
Claims20
A lithography system, comprising:
- a projection lens system having a first end and a second end;
- an energy source disposed proximate the first end of the projection lens system;
- a lithography mask disposed between the first end of the projection lens system and the energy source, the lithography mask comprising a pattern for at least one feature and an assist feature disposed in the pattern for the at least one feature, wherein the assist feature extends completely from a first edge of the pattern for the at least one feature to a second edge of the pattern for the at least one feature, wherein the second edge is opposite the first edge of the pattern for the at least one feature, wherein the assist feature does not intersect with any other assist feature;
- and
- a support for a wafer proximate the second end of the projection lens system.
A lithography system, comprising:
- a projection lens system having a first end and a second end;
- an energy source disposed proximate the first end of the projection lens system;
- a mask stage configured for holding a lithography mask disposed between the first end of the projection lens system and the energy source, the lithography mask comprising a pattern for at least one feature and an assist feature disposed in the pattern for the at least one feature, wherein the assist feature extends completely from a first edge of the pattern for the at least one feature to a second edge of the pattern for the at least one feature, wherein the second edge is opposite the first edge of the pattern for the at least one feature, wherein the assist feature does not intersect with any other assist feature;
- a wafer stage disposed under the second end of the projection lens system;
- and
- a means for disposing a fluid between the wafer stage and the second end of the projection lens system.
A lithography system, comprising:
- a projection lens system having a first end and a second end;
- an energy source disposed proximate the first end of the projection lens system;
- a mask stage configured for holding a lithography mask disposed between the first end of the projection lens system and the energy source, the lithography mask comprising a first pattern for a first feature, a second pattern for a second feature, a first assist feature in the first pattern and a second assist feature in the second pattern, wherein the first assist feature extends completely through the first pattern and wherein the second assist feature extends completely through the second pattern, and wherein the first and the second assist feature do not intersect with any other assist feature;
- and
- a wafer stage disposed under the second end of the projection lens system.
Dependencies are inferred from the claim text.