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US 2010/0073042 A1Published application
Semiconductor memory apparatus
AssigneeHynix Semiconductor Inc.
InventorYoung Kyoung Choi
Life of this patent
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Abstract
A semiconductor memory apparatus includes a initialization signal generating unit configured to vary a voltage level of an external voltage in response to a detection signal, the external voltage enables a power-up signal, an internal voltage generating unit configured to produce an internal voltage, the internal voltage generating unit is initialized by the power-up signal, and a detection signal generating unit configured to produce the detection signal in response to a voltage level of the internal voltage.
Claims18
A semiconductor memory apparatus, comprising:
- an initialization signal generating unit configured to vary a voltage level of an external voltage in response to a detection signal and to enable a power-up signal in response to the external voltage;
- an internal voltage generating unit configured to be initialized in response to the power-up signal and to produce an internal voltage;
- and
- a detection signal generating unit configured to produce the detection signal in response to the internal voltage.
1 more element
A semiconductor memory apparatus, comprising:
- an initialization signal generating unit configured to produce an initialization signal in response to a power-up signal and a voltage level of an internal voltage;
- and
- an internal voltage generating unit configured to be initialized in response to the initialization signal and to produce the internal voltage.
Dependencies are inferred from the claim text.