Substrate for an organic light-emitting device, use and process for manufacturing this substrate, and organic light-emitting device

The substrate (1) as claimed in any one of the preceding claims, characterized in that the combination of layers consisting of the contact layer (31), the overlayer (34) and all the layers located between these two layers, including the functional layer (32), is etched in the same etch pattern and preferably a single etching step.

The substrate (1) as claimed in any one of the preceding claims, characterized in that it has, on the one hand, a light transmission TL equal to or greater than 50% and, on the other hand, an absorption defined as being 1-RL-TL equal to or less than 15% or in that it has a light reflection RL equal to or greater than 70% or in that it has a TL/RL ratio of between 0.1 and 0.7.

The substrate (1) as claimed in any one of the preceding claims, characterized in that it has, on the overlayer (34) an RMS roughness equal to or less than 3 nm, preferably equal to or less than 2 nm or even equal to or less than 1 nm.

The substrate (1) as claimed in any one of the preceding claims, characterized in that the functional layer (32) is based on a pure material chosen from:

• silver, gold, aluminum and copper or based on said material alloyed or doped with another material chosen from:
• Ag, Au, Pd, Al, Pt, Cu, Zn, Cd, In, Si, Zr, Mo, Ni, Cr, Mg, Mn, Co and Sn, and especially is based on a gold/silver alloy or on a gold/copper alloy.

The substrate (1) as claimed in any one of the preceding claims, characterized in that the contact layer (31) is based on at least one of the following metal oxides, which is optionally doped:

• chromium oxide, indium oxide, optionally substoichiometric zinc oxide, aluminum oxide, titanium oxide, molybdenum oxide, zirconium oxide, antimony oxide, tin oxide, tantalum oxide and silicon oxide and in that the contact layer preferably has a thickness of between 3 and 30 nm.

The substrate (1) as claimed in any one of the preceding claims, characterized in that the overlayer (34) is based on at least one of the following, optionally doped, metal oxides:

• chromium oxide, indium oxide, optionally substoichiometric zinc oxide, aluminum oxide, titanium oxide, molybdenum oxide, zirconium oxide, antimony oxide, tin oxide, tantalum oxide and silicon oxide and in that the overlayer preferably has a thickness of between 3 and 50 nm.

The substrate (1) as claimed in any one of the preceding claims, characterized in that the functional metallic layer (32) is based directly on at least one subjacent blocking film (31′) and/or directly beneath at least one superjacent blocking film (32′).

The substrate (1) as claimed in the preceding claim, characterized in that at least one blocking film (31′, 32′) comprises a metallic, metal nitride and/or metal oxide layer, based on at least one of the following metals:

• Ti, V, Mn, Fe, Co, Cu, Zn, Zr, Hf, Al, Nb, Ni, Cr, Mo, Ta and W, or based on an alloy of at least one of said materials.

The substrate (1) as claimed in any one of the preceding claims, characterized in that it includes, between the base layer (2) and the contact layer (31), a noncrystalline smoothing layer (30) made of a mixed oxide, said smoothing layer (30) being placed immediately beneath said contact layer (31) and being made of a material other than that of the contact layer.

The substrate (10) as claimed in the preceding claim, characterized in that the smoothing layer (30) is a mixed oxide layer based on oxides of one or more of the following metals:

• Sn, Si, Ti, Zr, Hf, Zn, Ga, In and especially is an optionally doped mixed oxide layer based on zinc and tin or a layer of a mixed indium tin oxide (ITO) or a layer of a mixed indium zinc oxide (IZO).

The substrate (1) as claimed in any one of the preceding claims, characterized in that deposited n times on the base layer (2) and an optional etch stop layer, where n is an integer equal to or greater than 1, is the following structure:

• the contact layer (31) and the functional metallic layer (32), the structure being surmounted by a sequence comprising the succession consisting at least of:
• contact layer (31)/functional metallic layer (32)/overlayer (34).

The substrate (1) as claimed in any one of the preceding claims, characterized in that it includes a bottom bus electrode structure (61, 61′) above the bottom electrode film (3), said bus electrode structure (61, 61′) being in electrical contact with said electrode film (3).

The substrate (1) as claimed in any one of the preceding claims, characterized in that it includes an OLED system (4) above the electrode film (3).

The substrate (1) as claimed in the preceding claims, characterized in that it includes a top electrode film (5) above said OLED system (4).

The substrate (1) as claimed in the preceding claim, characterized in that it includes a top bus electrode structure (62) above the top electrode film (5), said bus electrode structure (62) being in electrical contact with said top electrode film (5).

The substrate (1) as claimed in any one of the preceding claims, characterized in that the assembly formed by the base layer (2) and the bottom electrode film (3) consists of a multilayer coating for architectural glazing, especially a “toughenable” multilayer coating or one “to be toughened” and/or especially a low-E multilayer coating.

The substrate (1) as claimed in any one of the preceding claims, characterized in that the substrate coated with the base layer (2) and with the bottom electrode film (3) consists of a substrate for architectural glazing, especially a “toughenable” substrate or one “to be toughened”, which is coated with a thin-film multilayer coating and/or especially a low-E multilayer coating.

The substrate (1) according to any one of the preceding claims, characterized in that it includes, on a second main face (12), a functional film chosen from:

• an antireflection multilayer, an antifogging or antifouling layer, an ultraviolet filter, especially a titanium oxide layer, a phosphor layer, a mirror layer and a light extraction scattering zone (73).

The use as claimed in the preceding claim in which said substrate (1) includes a bottom bus electrode structure (61, 61′), an OLED layer (4) above the bottom electrode film (3), a top electrode film (5) above said OLED system (4) and a top bus electrode structure (62).

The organic light-emitting device (10) as claimed in the preceding claim, integrated into a glazing unit, and especially a double-glazing or laminated-glazing unit.

The process as claimed in the preceding claim, characterized in that the etching is an acid etching operation, this etching being carried out in one step and with an acid solution chosen from pure nitric acid HNO3 or nitric acid mixed with hydrochloric acid HCl, or pure hydrochloric acid or hydrochloric acid mixed with iron trichloride FeCl3.