Surface emission type electron source and drawing device

A surface emission type electron source comprising:

• a first electrode having a planar form;
• a second electrode having a planar form facing the first electrode;
• an electron passage layer disposed between the first electrode and the second electrode;
• and
• a power source part configured to apply a voltage to the second electrode and the first electrode, wherein:
• the electron passage layer comprises a plurality of quantum wires extending in a first direction from the first electrode to the second electrode, the quantum wires being spaced apart from each other at predetermined intervals, and electrons are emitted from a front surface of the second electrode;
• and
• the quantum wires are made of silicon, a layer constituted by an insulator or a semiconductor is formed between the second electrode and the electron passage layer, and protrusions protruding toward leading ends of the quantum wires are formed on a back surface of the second electrode at positions corresponding to the quantum wires.

A drawing device comprising:

• a surface emission type electron source comprising a first electrode having a planar form, a second electrode having a planar form facing the first electrode, an electron passage layer disposed between the first electrode and the second electrode, and a power source part configured to apply a voltage to the second electrode and the first electrode, wherein the electron passage layer comprises a plurality of quantum wires extending in a first direction from the first electrode to the second electrode, the quantum wires being spaced apart from each other at predetermined intervals, and electrons are emitted from a front surface of the second electrode;
• and
• a stage having a surface on which a drawing target is placed, the stage being disposed so as to face the second electrode of the surface emission type electron source, wherein:
• the quantum wires of the surface emission type electron source are made of silicon, and each of the quantum wires has a plurality of thin parts having small thicknesses formed at predetermined intervals along the first direction.