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US 2010/0072601 A1Published application
Semiconductor device and manufacturing method of a semiconductor device
AssigneeNEC Corporation
InventorShinji Tanaka
Life of this patent
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Abstract
A semiconductor device of the present invention comprises a substrate and a first semiconductor element. The substrate comprises an inner layer conductor and a cavity comprising the bottom surface on which a part of the inner layer conductor is exposed. The first semiconductor element contacts, in the cavity, the inner layer conductor directly or via a good heat conductor material.
Claims15
A semiconductor device comprising:
- a substrate including an inner layer conductor and a cavity comprising a bottom surface on which a part of said inner layer conductor is exposed;
- and
- a first semiconductor element contacting, in said cavity, said inner layer conductor directly or via a good heat conductor material.
A manufacturing method of a semiconductor device comprising:
- forming a cavity by scraping a substrate, a bottom surface of said cavity being an inner layer conductor which is exposed;
- making a first semiconductor element contact, in said cavity, said inner layer conductor directly or via a good heat conduction material;
- and
- connecting a second semiconductor element with said first semiconductor element and said substrate electrically.
1 more element
Dependencies are inferred from the claim text.