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US 2010/0072580 A1Published application
Ultra-thin oxide bonding for si to si dual orientation bonding
AssigneeIntel Corporation
InventorsMohamad A. Shaheen, Willy Rachmady, Peter Toichinsky
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Abstract
A multi-layered substrate with bulk substrate characteristics and processes for the fabrication of such substrates are herein disclosed. The multi-layered substrate can include a first layer, a second layer and an interfacial layer therebetween. The first and second layers can be silicon, germanium, or any other suitable material of the same or different crystal orientations. The interfacial layer can be an oxide layer from about 5 Angstroms to about 50 Angstroms.
Claims7
A device comprising:
- a multi-layer substrate comprising a first layer, an interfacial layer and a second layer, the interfacial layer disposed between the first layer and the second layer, the multi-layer substrate having a characteristic of a bulk substrate when the interfacial layer is less than 15 Angstroms.
Dependencies are inferred from the claim text.