Through Substrate Conductors
OwnerAndreas Thies, Harry Hedlerinventors
Life of this patent
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Abstract
Structures and methods of forming through substrate vias are disclosed. In one embodiment, the method includes forming a through substrate opening from a top surface of a substrate, the top surface including active devices, and filling the first through substrate opening with an ancillary material. A conductive capping layer is formed over the ancillary material to cap the first through substrate opening. The substrate is thinned from a back surface to expose a portion of the ancillary material, the back surface being opposite to the top surface. The ancillary material is removed from the first through substrate opening, and a conductor is formed by filling a conductive material into the through substrate opening.
Claims32
A semiconductor chip comprising:
- a first through substrate opening disposed in a substrate, the first through substrate opening comprising a first width, the first through substrate opening extending from a top surface of the substrate to a bottom surface of the substrate, the top surface comprising active devices, and the bottom surface being opposite to the top surface;
- a dielectric liner disposed on sidewalls of the first through substrate opening;
- and
- a conductive fill material filling the first through substrate opening, wherein the conductive fill material is disposed on the dielectric liner, the conductive fill material being disposed from a conductive bottom pad, the conductive bottom pad disposed over the top surface of the substrate.
A semiconductor chip comprising:
- a top conductive pad disposed above a top surface of a substrate, the top surface comprising active devices;
- a bottom conductive pad disposed adjacent a bottom surface of the substrate, the top surface being opposite the bottom surface;
- a first vertical line disposed in the substrate, the first vertical line extending from the top conductive pad to the bottom conductive pad;
- and
- a second vertical line disposed in the substrate, the second vertical line extending from the top conductive pad to the bottom conductive pad, wherein the first and the second vertical lines are electrically coupled in parallel between the top conductive pad and the bottom conductive pad.
A method of forming a semiconductor device comprising through substrate vias, the method comprising:
- forming a first through substrate opening from a top surface of a substrate, the top surface comprising active devices;
- and
- filling the through substrate opening from a bottom surface of the substrate using a one-dimensional deposition process, wherein the one-dimensional deposition process deposits from a bottom of the through substrate opening along a depth of the through substrate opening, wherein the bottom surface is opposite to the top surface, and wherein the bottom of the through substrate opening is adjacent the top surface.
A method of forming a semiconductor device comprising through substrate vias, the method comprising:
- forming a first through substrate opening from a top surface of a substrate, the top surface comprising active devices;
- filling the first through substrate opening with an ancillary material;
- capping the first through substrate opening by forming a conductive capping layer over the ancillary material;
- thinning the substrate from a back surface to expose a portion of the ancillary material, the back surface being opposite to the top surface;
- after exposing the portion of the ancillary material, removing the ancillary material from the first through substrate opening to regenerate the first through substrate opening;
- and
- forming a first conductor by filling a conductive material into the regenerated first through substrate opening.
A method of forming a semiconductor device comprising through substrate vias, the method comprising:
- forming a first through substrate opening from a top surface of a substrate, the top surface comprising active devices;
- forming a second through substrate opening from the top surface, the second through substrate opening comprising at least one dimension different from the first through substrate opening;
- filling the first and the second through substrate openings with an ancillary material;
- forming a conductive capping layer over the ancillary material;
- thinning the substrate from a back surface to expose a portion of the ancillary material, the back surface being opposite to the top surface;
- removing the ancillary material from the first and the second through substrate openings;
- and
- filling a conductive material into the first and the second through substrate openings.
Dependencies are inferred from the claim text.