Semiconductor device
AssigneeRohm Co., Ltd.
InventorMasaru Takaishi
Life of this patent
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Abstract
Provided is a semiconductor device in which on-resistance is largely reduced. The semiconductor device includes an n type epitaxial layer (2) in which each region between neighboring trenches (3) becomes a channel (9), and a plurality of embedded electrodes (5) each of which is formed on an inner surface of each trench (3) via a silicon oxide film (4). By blocking each region between neighboring trenches (3) with every depletion layer (10) formed around each of trenches (3), current flowing through each region between the neighboring trenches (3) is interrupted. By deleting every depletion layer (10) formed around each of the trenches (3), current can flow through each region between the neighboring trenches (3).
Claims9
A semiconductor device comprising:
- a semiconductor layer of one conductivity type including a plurality of trenches arranged with predetermined spaces, each region between the neighboring trenches providing a channel;
- and
- a plurality of embedded electrodes each of which is disposed on an inner surface of a respective one of the plurality of trenches via an insulator film so as to fill in each of the plurality of trenches,
- wherein the semiconductor device is arranged such that, when each region between the neighboring trenches is blocked by respective depletion layers being formed around each of the plurality of trenches, current flowing through each region between the neighboring trenches is interrupted, and when each of the depletion layers is deleted, current can flow through each region between the neighboring trenches.
A semiconductor device comprising:
- a semiconductor layer of one conductivity type including a plurality of trenches arranged with predetermined spaces, each of the trenches having an opening end on an upper surface side, so that each region between the neighboring trenches providing a current passage;
- a plurality of embedded electrodes each of which is on an inner surface of a respective one of the plurality of trenches via an insulator film so as to fill in each of the plurality of trenches in the semiconductor layer;
- and
- an electrode layer disposed on one of an upper surface or a lower surface of the semiconductor layer so as to provide a Schottky contact with the semiconductor layer,
- wherein the semiconductor device is arranged such that, when each region between the neighboring trenches in the semiconductor layer is blocked by a depletion layer being formed around the trench, current is interrupted, and when at least a part of the depletion layer formed around the trench is deleted, current can flow, and
- if the electrode layer is on the upper surface side of the semiconductor layer, the electrode layer has the Schottky contact with the upper surface of each region between the neighboring trenches in the semiconductor layer, whereas if the electrode layer is on the lower surface side of the semiconductor layer, the electrode layer has the Schottky contact with the lower surface of the semiconductor layer.
Dependencies are inferred from the claim text.