US 2010/0072545 A1 · Recessed Channel Array Transistors, and Semiconductor Devices Including a Recessed Channel Array Transistor

Abstract

A recessed channel array transistor may include a substrate, a gate oxide layer, a gate electrode and source/drain regions. The substrate may have an active region and an isolation region. A recess may be formed in the active region. The gate oxide layer may be formed on the recess and the substrate. The gate oxide layer may include a first portion on an intersection between a side end of the recess and a sidewall of the active region and a second portion on a side surface of the recess. The first portion may include a thickness greater than about 70% of a thickness of the second portion. The gate electrode may be formed on the gate oxide layer. The source/drain regions may be formed in the substrate. Thus, the recessed channel array transistor may have a decreased leakage current and an increased on-current.

Claims14

Dependent claims

A recessed channel array transistor comprising:

a substrate having an active region that includes a recess and an isolation region;
a gate oxide layer formed on an inner surface of the recess and an upper surface of the substrate, the gate oxide layer including a first portion on an intersection between a side end of the recess and a sidewall of the active region and a second portion on a side surface of the recess, the first portion having a thickness greater than about 70% of a thickness of the second portion;
a gate electrode formed on the gate oxide layer and in the recess;
and
source/drain regions formed in the upper surface of the substrate at both sides of the gate electrode.

2 more elements

Dependencies are inferred from the claim text.

Recessed Channel Array Transistors, and Semiconductor Devices Including a Recessed Channel Array Transistor

Life of this patent

Recessed Channel Array Transistors, and Semiconductor Devices Including a Recessed Channel Array Transistor

Life of this patent

Abstract

Claims14